Low Cost InGaN Device Production and HOVPE Tool

InGaN and the related group III-Nitride semiconductors are important for a range of electronic device applications, spanning lasers, LED's, photovoltaics, detectors, and high speed / high power devices. Present production technologies such as MOCVD and MBE are too slow and too expensive for commercial production of all but the most high-end products. In this Phase II SBIR effort, Structured Materials Industries, Inc. (www.structuredmaterials.com (SMI)) will solve the speed and cost limitations in today’s nitride device making - we will build a further scalable pilot hybrid HVPE/OMVPE– HOVPE production tool for InGaN and related materials, capable of low cost and high volume material and device production. In Phase I, we exceeded our proposed proof of concept of the technology – demonstrating technical feasibility and resolving several issues. In Phase II, we will implement our patent pending design at pilot production scale, demonstrating product capabilities by producing photovoltaic and LED devices exhibiting multiple indium content (through >5%) and we will refine our cost model, and extend our production pathway(s) of both the tool and of low cost devices. In the process we will establish a tool and material demonstration capability in our applications lab and we will establish product manufacturing for Phase III sale.