Low Cost InGaN Device Production and HOVPE Tool

In this SBIR effort, Structured Materials Industries, Inc. www.structuredmaterials.com (SMI) will develop a low-cost production technology, and the commercial tool set, for low cost InGaN devices production. InGaN and the related group III-Nitride semiconductors are important for a range of electronic device applications, spanning LED's, photovoltaics, detectors, and high speed / high power devices. Present production technologies such as MOCVD and MBE are too slow and too expensive for commercial production of all but the most high-end products. This project will develop a scalable production HVPE/OMVPE hybrid tool for InGaN and related materials, capable of low cost and high volume device production. In Phase I, we will demonstrate technical feasibility of the HVPE/OMVPE hybrid concept. In Phase II, we will reduce the concept to practice and build a prototype HVPE/OMVPE hybrid reactor. We will also demonstrate the capabilities in Phase II, by producing InGaN based devices – nominally a photovoltaic and a quantum well LED.