SBIR/STTR Research Award
HVPE-grown InGaN Materials for Aggressive Cost Reduction of Solid State Lighting Technologies
Award amount
$98,999Program and phase
SBIR · Phase IAward year
2009Award details
- Awarding agency
- Department of Defense
- Branch
- Defense Advanced Research Projects Agency
- Recipient company
- KYMA TECHNOLOGIES, INC.
- Proposal award date
- 2009-06-11
- Contract end date
- 2010-02-28
- UEI
- GDV6R1VLRVN7
- Solicitation number
- 2008.2
- Topic code
- SB082-053
Research abstract
Kyma Technologies will develop InGaN growth technologies using the hydride vapor phase epitaxy (HVPE) process, and will combine this with a proven GaN epitaxial growth technology to enable aggressive cost reduction for InGaN-based devices. This approach will enable a reduction in the required MOCVD growth steps in the fabrication of LEDs for solid state lighting, leading to a significant reduction in the costs of epitaxy of the LED device structure. In Phase I, Kyma will demonstrate high quality InGaN-based epitaxial layers via HVPE using a novel HVPE growth platform.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Low-Cost Manufacturing of High Quality GaN Substrates
- Pulsed Sputter Deposition (PSD) for Efficient Doping for GaN HEMT Contacts
- HVPE-Based Gallium Oxide Epiwafer Development
- High Responsivity Optical GaN Switch
- Radiation-Tolerant Vertical GaN Diodes
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Low Cost InGaN Device Production and HOVPE Tool
- Low-cost device relevant Indium Gallium Nitride (InGaN) or Alternatives
- Low Cost InGaN Device Production and HOVPE Tool
Research funding history
83 SBIR/STTR records share this UEI (2000–2024). Reported award amounts total $34,128,798. Reported amounts are not federal obligations.
Phases: Phase I, Phase II, Phase II – Direct to Phase II
Agencies: Department of Defense, Department of Energy, National Aeronautics and Space Administration