SBIR/STTR Research Award

Indium Gallium Nitride (InGaN) Solar Cell

Award identifier b570331d61aa5db78894987d9436be180cf036433b08a00c6f6f2c2192999642Awarding agency Department of Defense · Defense Advanced Research Projects Agency

Award amount

$734,098

Program and phase

SBIR · Phase II

Award year

2010

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Award details

Awarding agency
Department of Defense
Branch
Defense Advanced Research Projects Agency
Recipient company
CERMET, INC.
Proposal award date
2010-06-25
Contract end date
2011-06-24
UEI
Not reported
Solicitation number
2008.2
Topic code
SB082-052

Research abstract

Cermet, in collaboration with leading university partners, proposes to use state of the art indium gallium nitride growth technology to produce InGaN junctions for solar cell production. Using multi-junction InGaN geometries, highly efficient solar cells will be demonstrated.

Technology keywords

Not reported

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Agency intelligence

Department of Defense

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