SBIR/STTR Research Award

High Bandgap InGaN Solar Cell

Award identifier 79d6cf65105493e116a77b4dfa6ed17aff00965cfe84fa54fb24d08758546e87Awarding agency Department of Defense · Defense Advanced Research Projects Agency

Award amount

$98,956

Program and phase

SBIR · Phase I

Award year

2009

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Award details

Awarding agency
Department of Defense
Branch
Defense Advanced Research Projects Agency
Recipient company
Integrated Micro Sensors, Inc.
Proposal award date
2009-02-05
Contract end date
2009-10-08
UEI
HKDSBLXQQLL1
Solicitation number
2008.2
Topic code
SB082-052

Research abstract

The objective of this Phase I project is to demonstrate InGaN materials of high quality appropriate for single junction solar cells for DOD terrestrial power generation. A single junction InGaN cell with a bandgap between 2.4 and 2.8 eV combined with silicon or other solar cell technology in a multi-junction device could provide power conversion efficiency exceeding 40%. In order to do so, the InGaN material must have suitable doping levels and good transparency to sub-bandgap light. In this project, we investigate the feasibility of high bandgap InGaN solar cell by demonstrating the materials growth, documenting the material properties, and modeling the design for a prototype solar cell.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

27 SBIR/STTR records share this UEI (2001–2013). Reported award amounts total $6,557,770. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Energy, National Science Foundation, Department of Health and Human Services

Agency intelligence

Department of Defense

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