High Bandgap InGaN Solar Cell
Award amount
$98,956Program and phase
SBIR · Phase IAward year
2009Award details
- Awarding agency
- Department of Defense
- Branch
- Defense Advanced Research Projects Agency
- Recipient company
- Integrated Micro Sensors, Inc.
- Proposal award date
- 2009-02-05
- Contract end date
- 2009-10-08
- UEI
- HKDSBLXQQLL1
- Solicitation number
- 2008.2
- Topic code
- SB082-052
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Drastic Improvements in Bonding of Highly Dissimilar Materials
- High-Speed Radiation Tolerant Avalanche Photodiodes Based on InGaN for Space Altimeter Systems
- Miniature Intelligent Wireless Fire Detector System
- Drastic Improvements in Bonding of Fiber Reinforced Multifunctional Composites
- Drastic Improvements in Bonding of Fiber Reinforced Multifunctional Composites
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Indium Gallium Nitride (InGaN) Solar Cell
- Indium Gallium Nitride (InGaN) Solar Cell
- Indium Gallium Nitride (InGaN) Solar Cell
- High Efficiency InN-Based Quantum Dot Solar Cells
Research funding history
27 SBIR/STTR records share this UEI (2001–2013). Reported award amounts total $6,557,770. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Energy, National Science Foundation, Department of Health and Human Services