SBIR/STTR Research Award

Indium Gallium Nitride (InGaN) Solar Cell

Award identifier d832e9ba208714848213380fd345f93813d0b0a8eced0c99273df9cded1a6ab4Awarding agency Department of Defense · Defense Advanced Research Projects Agency

Award amount

$98,000

Program and phase

SBIR · Phase I

Award year

2009

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Award details

Awarding agency
Department of Defense
Branch
Defense Advanced Research Projects Agency
Recipient company
CERMET, INC.
Proposal award date
2009-01-29
Contract end date
2009-09-30
UEI
Not reported
Solicitation number
2008.2
Topic code
SB082-052

Research abstract

This phase I development will provide a low defect InGaN p-n junction tuned to 2.6 eV. The characteristics of the junction will be high electron and hole concentrations, low defect density and no phase separation in the InGaN. This will be accomplished using a revolutionary epitaxial technique, combined with lattice-matched substrates and state of the art device fabrication.

Technology keywords

Not reported

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Agency intelligence

Department of Defense

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