The Characterization and Mitigation of Radiation Effects on Nano-technology Microelectronics

Robust Chip Inc. (RCI) and Stanford University (Stanford – subcontractor) propose a project with two main parts: 1. Development of a unique new layout and circuit design methodology for complete protections against both single and multiple single event errors with a minimal circuit and layout overhead. 2. Development, and integration with fundamental design flow technology (physical design and verification) of a new, breakthrough simulation and design automation tool-suite for support of radhard-by-design (RHBD). This tool-suite provides accurate information about cross-sections as a function of cell layout, circuit, and placement, for single- and multiple- node single-event upsets and transients. The software also provides support for total-dose, and prompt dose, analysis and hardening. The results in phase 1 of this project have been extraordinary; The performance and radiation hardness of the new layout methodology has been experimentally verified, with spectacular results. The radhard simulation and design automation tool-suite has been further developed and key concepts to strengthen the integration and application in physical design and verification have been developed. Furthermore, the simulation technology has, in numerous applications, proven very accurate and enormously useful.