High-Power Integrated Radio Frequency (RF) Switches for Joint Tactical Radio Systems (JTRS)

Auriga Measurement Systems has teamed with M/A-COM Technology Solutions and the Massachusetts Institute of Technology to provide the Army with single-pole, multi-throw and multi-pole, multi-throw switching elements suitable for the Joint Tactical Radio Systems. Insulated gate GaN HFETs on silicon and silicon carbide substrates are being investigated. This new high-dielectric technology has the potential to greatly reduce or eliminate the gate leakage effect currently limiting GaN switching devices. By using high performance FETs with novel circuit approaches, Auriga expects to demonstrate very low-loss switches that can operate over a wide bandwidth and survive up to 46dBm input power. These switches should overcome limitations presented by competing technologies, including low breakdown voltage, high bias current consumption, relatively slow modulation speeds, vertical layout integration complications, and low temperature stability. ___The Government’s rights to use, modify, reproduce, release, perform, display or disclose technical data or computer software marked with this legend are restricted during the period shown as provided in paragraph (b)(4) of the Rights in Noncommercial Technical Data and Computer Software—Small Business Innovative Research (SBIR) Program clause contained in the above identified contract. No restrictions apply after the expiration date shown above. Any reproduction of technical data, computer software, or portions thereof marked with this legend must also reproduce the markings.___