High-Power Integrated Radio Frequency (RF) Switches for Joint Tactical Radio Systems (JTRS)

This program addresses high power RF switches for the Joint Tactical Radio System (JTRS). The use of traditional pin-diodes possesses significant limitations on the overall system performance due to the high bias current consumption in the forward biased state, relatively slow modulation speeds, vertical layout integration complications and low temperature stability. RF switches based on GaAs technology suffer from low breakdown voltage and low maximum blocking RF powers. To meet the high level requirements for various systems, Auriga Measurement Systems, assisted by M/A-COM Inc., will develop a family of RF switches based on group III nitride HFETs and specifically, insulated gate HFETs. These devices are advantageous due to their much higher power handling capability, temperature stability and high reliability for JTRS RF switches and monolithically integrated switch arrays. During Phase I, insulated gate GaN HFET switch devices will be characterized and device models will be developed. The switching performance will be simulated and compared to the device characteristics. Once the model is validated, single-pole double-throw RF switches will be designed to operate from 2-2000MHz with an insertion loss less than 0.25dB and a maximum power handling greater than 46dBm (40W).