SBIR/STTR Research Award

High-Power Integrated Radio Frequency (RF) Switches for Joint Tactical Radio Systems (JTRS)

Award identifier c1071c6212cdacfaf2df790d12321a93b7c7a46a3743ed732c8bbe4e5b8e1606Awarding agency Department of Defense · Army

Award amount

$69,986

Program and phase

SBIR · Phase I

Award year

2008

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Award details

Awarding agency
Department of Defense
Branch
Army
Recipient company
Sensor Electronic Technology, Inc.
Proposal award date
2008-05-16
Contract end date
2008-11-30
UEI
ZLAMG4KBKN15
Solicitation number
2008.1
Topic code
A08-007

Research abstract

The proposal calls for development of novel type of RF switches for JTRS using patented III-Nitride insulated gate heterostructure field-effect transistors (MOSHFETs). III-Nitride MOSHFETs are excellent candidates for high-power RF stages of JTRS. They possess the highest power densities, highest operating temperatures and best robustness amongst other solid-state devices. The proposers’ team has demonstrated superior performance of monolithically integrated RF switches using MOSHFETs. In the course of proposed work, integrated SPDT and SP4T RF switches meeting the JTRS requirements for insertion loss less than 0.2 dB and switching powers exceeding +46 dBm will be developed.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

80 SBIR/STTR records share this UEI (1984–2014). Reported award amounts total $19,732,151. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, National Science Foundation, Department of Health and Human Services, National Aeronautics and Space Administration, Department of Agriculture

Agency intelligence

Department of Defense

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