SBIR/STTR Research Award

Radiation-Hardened Memory

Award identifier e9eaba57c4c045a1107bb865da456ee821abe6776caeee1fc4f15424aa43b069Awarding agency Department of Defense · Missile Defense Agency

Award amount

$99,967

Program and phase

SBIR · Phase I

Award year

2009

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Award details

Awarding agency
Department of Defense
Branch
Missile Defense Agency
Recipient company
MICROELECTRONICS RESEARCH DEVELOPMENT CORPORATION
Proposal award date
2009-03-27
Contract end date
2009-09-27
UEI
M2WCCD39B593
Solicitation number
2008.3
Topic code
MDA08-014

Research abstract

Micro-RDC will develop a Radiation Hardened 16Mbit SONOS based EEPROM with the highest levels of reliability. It will be manufactured in 180nm technology at a high volume, high yielding semiconductor foundry. The product will include techniques such as redundancy, internal EDAC, hardened latches and RHBD layout in order to meet all the radiation hardening requirements of this project. As an improvement over previous Mil Spec EEPROMs, the charge pump will also be hardened so that the product meets SEE and TID requirements for data writing also. Micro-RDC will incorporate a self-health-checkup feature to allow the user to determine how often to invoke the self-scrubbing mechanism. Micro-RDC will utilize circuit concepts of its’ “Trusted IC” program to maintain ITAR compliance.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

45 SBIR/STTR records share this UEI (2006–2019). Reported award amounts total $31,438,573. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, National Aeronautics and Space Administration

Agency intelligence

Department of Defense

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