Solid State Switch for high voltage sub-microsecond pulsed power

ABSTRACT: Applied Pulsed Power, Inc. (APP) proposes to develop a solid state switch for high voltage sub-microsecond pulsed power, using silicon carbide modules. The objective of the solicitation is to develop a compact, solid state pulsed power switch capable of switching 20-50 kV, and I > 5 kA with low jitter, fast rise time (~20 ns), L 5 kA with low jitter, pulse length to 1000 ns, and up to 1000 Hz prf using silicon thyristors.[1,2] These switches are used for applications with pulsewidths > 200 ns and di/dt of < 100 kA/us. Patented packaging and triggering techniques are used to produce 20-60 kV switches from multiple identical lower voltage modules.[3,4,5] APP is also developing laser triggered, fast turn on, silicon switches.[6] We will apply these techniques to silicon carbide devices to produce low inductance (< 1nH/kV) switches with <20 ns risetimes. BENEFIT: The results of our approach would be compact, high voltage, high power, silicon carbide, solid state switches capable of faster rise time, higher operating temperatures and with lower inductance than silicon switches. In contrast to thyratrons and spark gaps, the SiC switches will be capable of operation in harsh environments, have long service lifetimes and are without the requirement of filament power supplies, high voltage trigger systems, gas handling or other axillary systems. This research will develop new applications for solid state switches such as radar, microwave, lasers for eye surgery and modulators for radiation therapy which all require 100ns switching that cannot be accomplished with the currently available solid state switch technology.