SBIR/STTR Research Award
Solid State Switch for high voltage sub-microsecond pulsed power
Award amount
$99,996Program and phase
SBIR · Phase IAward year
2008Award details
- Awarding agency
- Department of Defense
- Branch
- Air Force
- Recipient company
- APPLIED PULSED POWER, INC.
- Proposal award date
- 2008-01-18
- Contract end date
- 2009-01-22
- UEI
- Not reported
- Solicitation number
- 2007.3
- Topic code
- AF073-008
Research abstract
Applied Pulsed Power, Inc. (APP) proposes to develop a solid state switch for high voltage sub-microsecond pulsed power, using silicon carbide devices. The objective of the solicitation is to develop a compact, solid state pulsed power switch capable of switching 20-50 kV, and I > 5 kA with low jitter, fast rise time (~20 ns), L 5 kA with low jitter, pulse length to 1000 ns, and up to 1000 Hz prf using silicon thyristors. These switches are used for applications with pulsewidths >200 ns and di/dt of <100 kA/us. Patented packaging and triggering techniques are used to produce 20-60 kV switches from multiple identical lower voltage modules. We will apply these techniques to silicon carbide devices to produce low inductance (< 1nH/kV) switches with <20 ns risetimes.
Technology keywords
Not reported
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Solid State Switch for high voltage sub-microsecond pulsed power
- Photon Initiated Thyristor Switches
- Photo-Conductive Silicon Carbide Switches
- Photon Initiated Thyristor Switches