SBIR/STTR Research Award
Photo-Conductive Silicon Carbide Switches
Award amount
$100,000Program and phase
SBIR · Phase IAward year
2008Award details
- Awarding agency
- Department of Defense
- Branch
- Air Force
- Recipient company
- SCI-ENG SOLUTIONS, LLC
- Proposal award date
- 2008-01-18
- Contract end date
- 2009-01-22
- UEI
- JHC7LPC7L164
- Solicitation number
- 2007.3
- Topic code
- AF073-008
Research abstract
The proposed solid-state "Photo-Conductive Silicon Carbide Switches" offer an outstanding opportunity to fulfill the switching requirements for numerous DoD systems including many of those pertinent to High Power Microwave sources for crucial Directed Energy applications.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Photon Initiated Thyristor Switches
- Highly Directional Photo-Switched Terahertz Source
- Neutron Transmutation Doped Silicon Carbide Switches
- Highly Directional Photo-Switched Terahertz Source
- Photon Initiated Thyristor Switches
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Solid State Switch for high voltage sub-microsecond pulsed power
- Solid State Switch for high voltage sub-microsecond pulsed power
Research funding history
13 SBIR/STTR records share this UEI (2003–2009). Reported award amounts total $3,124,993. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Energy, Department of Defense