SBIR/STTR Research Award

High Efficiency Multi-Junction Photovoltaics on Silicon Substrates

Award identifier adad161a2b4a53203690262a3f96f344426ad57ab566e130379fcbe1d2d8a37eAwarding agency Department of Defense · Defense Advanced Research Projects Agency

Award amount

$97,396

Program and phase

SBIR · Phase I

Award year

2007

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Award details

Awarding agency
Department of Defense
Branch
Defense Advanced Research Projects Agency
Recipient company
SVT ASSOCIATES INC
Proposal award date
2007-11-15
Contract end date
2008-08-01
UEI
MLVQMLJLC139
Solicitation number
2007.2
Topic code
SB072-043

Research abstract

SVT Associates proposes a 6-month Phase I investigation to create high efficiency photovoltaic cells on silicon substrates through the use of multiple junction absorbing layers. The key technology to be investigated is the epitaxial growth of compound semiconductor on Si. Si substrates are favored for the low density, low cost, large area and mechanical robustness.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

165 SBIR/STTR records share this UEI (1990–2014). Reported award amounts total $29,785,067. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Energy, National Science Foundation

Agency intelligence

Department of Defense

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