SBIR/STTR Research Award
Crystal Growth and Characterization of Doped VUV Crystals
Award amount
$999,821Program and phase
SBIR · Phase IIAward year
2025Award details
- Awarding agency
- Department of Defense
- Branch
- Office of the Secretary of Defense
- Recipient company
- CAPESYM INC
- Proposal award date
- 2025-08-08
- Contract end date
- 2027-08-07
- UEI
- CSZST8YFP7K1
- Solicitation number
- 23.3
- Topic code
- OSD233-003
Research abstract
This program is focused on the development of facilities, equipment, and process for crystal growth of doped VUV crystals.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- High-Resolution Direct-Conversion X-ray Detectors for Low-Dose Imaging
- Low-Cost High-Efficiency X-ray Imaging Panels for Field Radiography
- High Yield Growth and Fabrication of Spectroscopic Radiation Detection Semiconductors
- High Quantum Efficiency Scintillators for Dual Readout Calorimetry
- High Dose-Rate Rugged Dosimeter
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- OSD233-003 Specialized Crystal Growth and Material Characterization
- Crystal Growth and Characterization of Doped VUV Crystals
- VUV Crystal Growth and Characterization
Research funding history
85 SBIR/STTR records share this UEI (1997–2025). Reported award amounts total $46,105,917. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, Department of Energy, Department of Homeland Security, Department of Health and Human Services, National Aeronautics and Space Administration