SBIR/STTR Research Award

Silicon Carbide MOSFET

Award identifier bc872495a584096edf8ed82e726e8523efeb9900117823d389f0676a8028295eAwarding agency Department of Defense · Army

Award amount

$729,942

Program and phase

SBIR · Phase II

Award year

2006

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Award details

Awarding agency
Department of Defense
Branch
Army
Recipient company
NANODYNAMICS-88, INC.
Proposal award date
2006-10-26
Contract end date
2008-10-26
UEI
Not reported
Solicitation number
2005.2
Topic code
A05-236

Research abstract

The wide bandgap Si/C MOSFET makes use of silicon-based superlattice Si/C constructed on an insulating Si/O superlattice. Si/C on Si/O forms an SOI (semiconductor-on-insulator) structure upon which the MOSFETs will be constructed. The MOSFETs will be massively connected in parallel for power switches at high speed and under high temperatures.

Technology keywords

Not reported

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Verified by an exact topic code match. This is not a text-similarity match.

Agency intelligence

Department of Defense

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