Silicon Carbide MOSFET

The 4H-SiC can be fabricated on the silicon surface if the fabrication temperature can be under silicon processing, if the lattice mismatch between SiC and Si is only a few percent, and if the incorporation of silicon and carbon atoms can be epitaxial. The silicon-based superlattice approach satisfies all the above mentioned conditions and would produce the Si/C superlattice on the Si substrate for power MOSFET construction. A simple MOSFET with Schottky-based drain and source has been considered. It will be designed and evaluated under Phase I and be constructed and tested under Phase II. Other power MOSFET designs will also be considered and compared under Phase II efforts, leading to dual use production for military as well as commercial applications.