SBIR/STTR Research Award
High Power IMPATT-Mode AlGaN/GaN HFETs for mm-Wave Applications
Award amount
$749,030Program and phase
STTR · Phase IIAward year
2006Award details
- Awarding agency
- Department of Defense
- Branch
- Army
- Recipient company
- SVT ASSOCIATES INC
- Proposal award date
- 2006-10-03
- Contract end date
- 2007-10-03
- UEI
- MLVQMLJLC139
- Solicitation number
- Not reported
- Topic code
- A05-T008
Research abstract
This STTR Phase II program is directed toward the development of a GaN-based hetrostructure filed effect transistor (HFET) for high-power mm-wave applications. The device makes use of a recently discovered impact ionization avalanche transit time (IMPATT)
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Efficient EMI/RFI attenuation by GaN-based coating on spinel windows
- GaAsSb/AlGaAsP Superlattice Polarized Electron Source
- Plasmonic Enhanced Type-II Superlattice Focal Plane Arrays
- GaAsSb/AlGaAs Superlattice High-Polarization Electron Source
- GaAsSb/AlGaAsP Superlattice Polarized Electron Source
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Novel GaN-Based HFET Sources and Amplifiers for Millimeter-Wave Applications
- High Power IMPATT-Mode AlGaN/GaN HFETs for mm-Wave Applications
Research funding history
165 SBIR/STTR records share this UEI (1990–2014). Reported award amounts total $29,785,067. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Energy, National Science Foundation