SBIR/STTR Research Award

High Power IMPATT-Mode AlGaN/GaN HFETs for mm-Wave Applications

Award identifier bdd039df67280e9f8d69aee891cf582bb93411cc5ebeee4f204eff1189cb11a0Awarding agency Department of Defense · Army

Award amount

$99,922

Program and phase

STTR · Phase I

Award year

2005

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Award details

Awarding agency
Department of Defense
Branch
Army
Recipient company
SVT ASSOCIATES INC
Proposal award date
2005-08-15
Contract end date
2006-02-11
UEI
MLVQMLJLC139
Solicitation number
Not reported
Topic code
A05-T008

Research abstract

A new Aluminum gallium nitride (AlGaN) based heterojunction field-effect transistor (HFET) structure is proposed that utilizes avalanche impact ionization for very high frequency operation (>100 GHz). The main goal of this program is to demonstrate the potential of these devices as a replacement for vacuum tubes in mm-wave applications including radars and communications transmitters. In the Phase I program, device modeling, epitaxial growth, device processing and characterization will be done to fabricate a prototype AlGaN/GaN HFET operating in the impact ionization avalanche transit-time (IMPATT) mode.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

165 SBIR/STTR records share this UEI (1990–2014). Reported award amounts total $29,785,067. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Energy, National Science Foundation

Agency intelligence

Department of Defense

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