High Power Phase Shifters

Recent advent and significant progress made in Wide-Band-Gap (WBG) semiconductor technology offers today promise for a superior high power phase shifter. More specifically, our Phase-I results substantiate that premise for SiC PIN diode. Using model of a 400V SiC PIN diode we have simulated each of the 5-bits, and a complete 5-bit phase shifter, demonstrating the feasibility of the target, 1dB Insertion Loss, and 20% bandwidth in S-band. Additionally, SiC devices have been shown to operate at high current density (~.5A/mm), and extreme temperatures (~600°C). In order to meet Navy requirements in a cost effective manner, F&H proposes to develop a SiC PIN Diode-based MMIC phase shifter. During the Phase-II F&H will design, build, and demonstrate a 5-bit digital, high power MIC phase shifter prototype, using specially developed, discrete SiC PIN diodes in lumped element circuits. Upon performance verification, the MMIC implementation will be considered in the Phase-III. In addition to meeting Navy requirements for shipboard radar, cost effective MMIC high power phase shifters will enable migration of many fixed antennae to beam steered versions, to include LMDS, cellular (3G&4G) and satellite applications. Vast markets associated with these applications will naturally lead to economy-of-scale pricing, in line with Navy objectives.