High Power Phase Shifters

Recent advent, and significant progress made in the wide-band-gap semiconductor technology offer today a promise for a superior high power phase shifter. More specifically, emerging Gallium Nitrate (GaN) HEMT devices are shown to operate in extreme temperatures (~600C), exhibiting high breakdown voltages (~100V) and high current densities (~1.5A/mm). In order to meet these challenging technical requirements in a cost effective manner, F&H proposes to develop a GaN HEMT based MMIC high power phase shifter. During the Phase I of this program GaN HEMT device switch characteristics will be measured and modeled. Models derived will be synthesized with appropriate phase shift elements, and overall performance will be optimized in S-Band. The results will be empirically verified using discrete GaN HEMT devices in lumped element phase shifter circuits. Ultimately, the feasibility of a GaN HEMT based high power phase shifter will be determined. In addition to meeting Navy requirements for shipboard radar, cost effective MMIC high power phase shifters will enable migration of many fixed antennae to beam steered versions to include LMDS, cellular (3G & 4G) and satellite applications. Vast markets associated with these applications will naturally lead to economy of scale pricing, in line with Navy objectives.