High Power Phase Shifters

This proposal addresses SBIR solicitation number N04-057 entitled "High Power Phase Shifters". The phase shifter is a critical component that enables array antennas to provide beam shaping, pointing and nulling. This SBIR calls for the investigation of the use of new wideband gap semiconductor materials to replace current ferrite phase shifter technology. Important performance characteristics to consider include power handling, insertion loss, switching speed, operating frequency (S-band), bandwidth and cost. Hittite proposes both innovative technology and circuit techniques to address the SBIR goals. Currently the dominant high power solid-state control component technologies include Silicon and AlGaAs PIN devices. Supported by new government programs wideband gap technologies such as SiC and GaN are experiencing rapid development for application to microwave power amplification. These developments will ultimately result in GaN and SiC, FET and PIN devices suitable for high power control applications. Herein we present some early results of a SiC PIN device under development at Cree. Phase I activity will include continued surveying of progress in the wideband gap area and characterizing devices that become available. A variety of analog and digital phase shifter topologies will be investigated and a trade study of MMIC versus hybrid implementation will be carried out.