Rapid,Single Atomic Step Mechano-chemical Polishing (MCP) of Silicon Carbide Wafers

Presently one of the outstanding challenges for rapid commercialization of SiC based device technology for high power/high frequency electronics is the affordable, volume production of damage-free, epi-ready 100 mm SiC wafers that exhibit single atomic steps (terraces). Sinmat Inc. in partnership with wafer manufacturers and the University of Florida propose to further develop a novel gentle mechano-chemical polishing (MCP) process for production of clean, epi-ready SiC wafers with atomic terraces. The MCP process is a unique sub-set of the chemical mechanical polishing (CMP) process and is characterized by the use of soft chemically active particles to induce oxidation of silicon carbide surfaces under appropriate chemical conditions. Furthermore, the relatively soft particles remove the film layer without damage to the underlying substrate. Initial experiments on polishing of silicon carbide have yielded extremely promising results. The PI for this project is Rajiv Singh (from the University of Florida and co-founder of Sinmat Inc), who is internationally recognized for his contributions in the CMP of electronic materials.