SBIR/STTR Research Award
AlInGaN-based Transistors for Advanced Applications
Award amount
$119,784Program and phase
SBIR · Phase IAward year
2005Award details
- Awarding agency
- Department of Defense
- Branch
- Army
- Recipient company
- SVT ASSOCIATES INC
- Proposal award date
- 2004-12-17
- Contract end date
- 2005-06-17
- UEI
- MLVQMLJLC139
- Solicitation number
- 2004.3
- Topic code
- A04-048
Research abstract
Aluminum gallium nitride (AlGaN) based high electron mobility transistors (HEMTs) have been demonstrated with superior characteristics that make them promising candidates for high-performance radar, communication, imaging and other advanced applications. Still, there remain performance and reproducibility related issues that must be addressed to achieve successful commercialization of these devices. In this Phase I project, we will investigate indium containing AlInGaN HEMTs as part of the effort towards improving dc and rf performance. The work will involve novel device design, material growth, and wafer processing.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Efficient EMI/RFI attenuation by GaN-based coating on spinel windows
- GaAsSb/AlGaAsP Superlattice Polarized Electron Source
- Plasmonic Enhanced Type-II Superlattice Focal Plane Arrays
- GaAsSb/AlGaAs Superlattice High-Polarization Electron Source
- GaAsSb/AlGaAsP Superlattice Polarized Electron Source
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- InGaN-Channel Heterostructure Field Effect Transistor With Double Recessed Gate for Improved RF Performance
- AlInGaN-based Transistors for Advanced Applications
- InGaN-Channel Heterostructure Field Effect Transistor With Double Recessed Gate for Improved RF Performance
Research funding history
165 SBIR/STTR records share this UEI (1990–2014). Reported award amounts total $29,785,067. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Energy, National Science Foundation