SBIR/STTR Research Award
AIN-barrier Field Effect Transistor
Award amount
$739,353Program and phase
SBIR · Phase IIAward year
2004Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- WaveBand Corporation
- Proposal award date
- 2004-09-25
- Contract end date
- 2006-09-24
- UEI
- Not reported
- Solicitation number
- 2003.1
- Topic code
- MDA03-034
Research abstract
The objective of the project is to fabricate and test a high-electron mobility transistor (HEMT) made of a GaN/AlGaN material system. The high Al-content in the barrier is the key point of the project. The project will result in a new AlN/GaN device, with increased cut-off frequency and output power.
Technology keywords
Not reported
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- High Power AlGaN/InGaN/AlGaN/GaN Recessed Gate Heterostructure Field Effect Transistor with InGaN as the RIE Etching Stop Layer
- AIN-barrier Field Effect Transistor
- Novel GaN HBT for Advanced T/R Modules for X-band Radar Performance Enhancement