AIN-barrier Field Effect Transistor

Mobile and space-borne platform applications require high power, compact, light-weight, efficient components. This is particularly true for high-power transistors. Existing technologies do not meet these stringent performance requirements. To solve this problem, WaveBand Corporation proposes to design, grow, characterize, and test high-power GaN-based metal insulator semiconductor field effect transistors (MISFET). High-power transistors are key to simplifying and improving the design and performance of amplifiers. These improvements are achieved by decreasing the number of devices (complexity and weight) that are needed to maintain the specifications (gain) for certain applications. WaveBand's Phase I project is also directly targeted at satisfying the MDA's requirements for high efficiency, GaN power amplifiers, for use in mobile and space-borne applications, particularly, for use in transceiver/receiver (T/R) modules for X-band ballistic missile defense radars. The key feature of the project is optimized growth technology, which will enable the optimal wide bandgap AlN barrier that forms the low-defect density interface and provides improved device performance, in terms of breakdown voltage, speed, power, power added efficiency, and temperature of operation. Phase II's goal is to fabricate, test, and optimize a high-power MISFET based on an AlN/GaN heterostructure. The availability of high electron mobility will bring the MISFET operations beyond the X-band frequency. WaveBand proposes to commercialize the results of the proposed project to meet the needs of both defense and commercial markets. Specifically, High Power Amplifiers (HPA) for X-band Transceiver/Receiver modules and Transmitters for Communication applications.