Novel GaN HBT for Advanced T/R Modules for X-band Radar Performance Enhancement

Recent advances in semiconductor technology have brought the performance of materials such as Silicon, Gallium Arsenide and Indium Phosphide close to their theoretical limits; however, device requirements for many applications of power electronics are at a point that present power devices cannot meet. The requirements include higher operating voltages, cut-off frequencies, efficiency and reliability. To overcome this limitation, new semiconductor materials for power device applications are needed. Wide bandgap semiconductors are currently being investigated by many groups. In many cases the main emphasis of these efforts is to produce devices such as diodes, transistors and thyristors with very high (several KV) breakdown voltages for power applications. The realization of microwave devices has concentrated largely on GaN/AlGaN HEMTs. We propose to use the properties of wide bandgaps to create a medium voltage (20-60 V) heterojunction bipolar transistor that will have very high-efficiency, high-frequency gain and high power performance enabled by a combination of high breakdown strength, high saturated drift velocity and just as importantly, high thermal conductivity. Material growth, device performance and improved simulations during the Phase I period predict excellent high frequency gain, power output and efficiency. Our unique patent-pending technology will deliver X-band radar amplifiers of superior performance.