Self-aligned L-band SiC Power MESFET with Improved Current Stability for Ballistic Missile Defense Systems

In coordination with other ONR and MDA sponsored SiC MESFET development, SemiSouth proposes development of an improved, L or S-band designed SiC MESFET which focuses on a self-aligned process. This self-aligned process requires development of a high-uniformity gate recess etch and an improved, smoother surface silicide process. This work complements ongoing work involving a major prime contractor on SiC MESFET's for long-range radar systems, where SemiSouth is focused on developing highly uniform MESFET epitaxy layers, and SiC MESFET passivation schemes.