SBIR/STTR Research Award

Ballistic Missile Innovative Radar and RF Products

Award identifier 7b72c6d260aeadf103d695b6506cc8f5e97840d55ae9c0eaf10c587508cc5a41Awarding agency Department of Defense · Missile Defense Agency

Award amount

$99,484

Program and phase

SBIR · Phase I

Award year

2004

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Award details

Awarding agency
Department of Defense
Branch
Missile Defense Agency
Recipient company
INTRINSIC SEMICONDUCTOR CORP.
Proposal award date
2004-04-29
Contract end date
2004-10-29
UEI
Not reported
Solicitation number
2004.1
Topic code
MDA04-039

Research abstract

Development of ultra pure silicon carbide (SiC) substrates that are electrically insulating will be pursued under the SBIR Phase I program. The Company has developed a unique and proprietary technique for making such substrates. A number of characterization tasks will also be performed on the wafers produced under to proposed effort.

Technology keywords

Not reported

Awards with the same topic code

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Agency intelligence

Department of Defense

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