FEASIBILITY OF DEVICE-GRADE INP HETEROEPITAXY ON SI

THE PROPOSED THREE-PHASE PROGRAM ADDRESSES THE NEED FOR LARGE-AREA LOW-COST INP SUBSTRATES FOR ELECTRONIC AND OPTOELECTRONIC DEVICES. IN PHASE I, WE PROPOSE TO INVESTIGATE THE FEASIBILITY OF FORMATION OF SUCH INP SUBSTRATES BY GROWING INP AND RELATED TERNARIES HETEROEPITAXIALLY ON SI. THE PROPOSED GROWTH PROCESS IS ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION. TWO SPECIFIC INNOVATIONS WILL BE INVESTIGATED THAT MAY REDUCE THE DEFECT DENSITY OF THE RESULTANT FILMS TO LEVELS SUITABLE FOR ELECTRONIC AND OPTOELECTRONIC DEVICES. IF THESE TECHNIQUES ARE PROVEN FEASIBLE, RESEARCH IN PHASE II WILL BE CARRIED OUT TO DEVELOP THE PROCESS. THE ULTIMATE OBJECTIVE OF THIS WORK IS THE COMMERCIALIZATION OF NEW INTEGRATED CIRCUITS FABRICATED ON SUCH SUBSTRATES. THIS PRODUCT DEVELOPMENT WILL BE CARRIED OUT IN PHASE II.