Development of High Performance AlInN-Based HEMTs

The AlInN alloy lattice matched to GaN is predicted to improve the performance and reliability of GaN-based high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits for military and commercial applications. High power and high frequency operation, along with high reliability, radiation and ESD resistance, are expected in discrete devices and integrated systems employing AlInN material. The most serious obstacle to the immediate utilization of AlInN in HEMT structures is the difficulty of its synthesis and device processing by the existing technologies. During Kopin’s Phase I effort, we achieved record high electron densities and electron mobility in our AlInN-based structures and demonstrated their potential for applications in high-performance transistors. In spite of this remarkable progress, further development on the synthesis and device processing of this material needs to be carried out for its transition to military product. During the Phase II effort Kopin will team up with industrial leaders in the design and manufacture of high-performance RF components to realize device quality AlInN-based structures and produce production prototype AlInN-based HEMT devices.