Development of High Performance AlInN-Based HEMTs

ransistors (HEMTs) by providing a strain-free alternative to AlGaN as the barrier material. In particular, AlInN lattice matched to GaN should exhibit significantly higher polarization-induced charge and drain current, resulting in enhanced high power and high frequency capabilities for GaN HEMTs. However, AlInN alloys are challenging materials to produce due to the difference in growth conditions between AlN and InN, and due to expected miscibility issues. Therefore, further development is required to realize high performance devices based on AlInN. This SBIR program will explore the optimization of AlInN for use in high power and high frequency GaN HEMTs.