INORGANIC ION EXCHANGERS FOR 213BI GENERATORS

Not Available In this proposal, researchers at Astralux, Inc. in collaboration with the University of Colorado at Boulder propose to form 4H-SiC/6H-SiC n-p heterojunctions for high power microwave device applications. Specifically, the goal is to commercialize a microwave SiC heterojunction bipolar transistor (HBT) with useful gain up to 20 GHz for satellite base stations, high-power transmitters and wireless communications. The advantages of HBTs over FETs are their expected superior linearity and current handling capability. A novel method of forming the 4H-SiC/6H-SiC heterojunciton will be pursued to form the base-emitter junction of an all SiC HBT. This method is expected to yield a high quality heterojunction suitable for minority carrier injection while avoiding the lattice mismatch and induced stress of a GaN/SiC junction. A novel self-aligned structure compatible with the 4H-SiC/6H-Sic material system is also proposed resulting in minimal parasitic elements and superior microwave performance. The Phase I goal is to demonstrate the feasibility of this tehnique as well as high quality heterjunctions leading eventually to microwave HBTs with 8 dB gain at 10 GHz and a power of 10 W/mm emitter stripe.