Foundry Flexfet(c)SOI, a Commercial Revolution in Rad-Hard Processing

"Low cost, high-frequency, radiation-tolerant wafer fabrication for next generation electronic circuits is limited by domestic manufacturing capability. General availability of inherently radiation tolerant silicon-on-insulator (SOI) process technology tothe fabless design community is limited to only one viable domestic source. This proposal presents the opportunity to create U.S. foundry manufacturing of an advanced commercial radiation hardened SOI wafer fabrication process. FlexfetcSOI is a novelstate of the art process that provides deep sub-micron, sub-lithographic minimum feature size, double gated MOSFETs and 4-terminal dynamic threshold metal oxide semiconductor (DTMOS) transistor configuration. The double gate characteristics facilitate arevolutionary Dynamic Radiation Compensationc circuit architecture that expands low cost reliability of the process beyond that of static, traditional, isolation techniques. Successful execution of this proposal and the follow-on Phase II effort can resultin improvements in reliability, advanced materials, performance and cost for defense procurement of rad-hard, low power electronic circuits. A significant strategy for cost reduction is the commercialization opportunity from offering this advanced processin a foundry all defense circuit designers can access. Further, the foundry installation of FlexfetcSOI creates an inherently low cost fabrication base by consolidating multiple design or