Nanoporous Silica Slurry for Enhanced CMP of Low Power Consumption Copper Interconnects

79522S In the manufacture of semiconductor interconnects, the copper Chemical Mechanical Planarization (CMP) process uses a slurry composed of large, hard particles that cause defects such as scratches, and delamination of the copper film from the low- k-dielectric-constant matter. To overcome these deficiencies, this project will develop technology for introducing nanoporous silica particles into the slurry, which would reduce the hardness of silica particles, increase stability in the slurry, reducing the scratches. The resulting porous-silica-formulated slurries would have lower defectivity and delamination free polishing compared to their nonporous counterparts. Phase I will synthesize nanoporous silica particles, formulate slurries, conduct CMP experiments, and measure CMP performance. In Phase II, integrated testing will be conducted on copper/ultra-low-k dielectrics. Commercial Applications and Other Benefits as described by the awardee: The market for copper slurry is expected to be $300 million by 2008 out of a total CMP market of $600 million. The nanoparticle technology should lead to fewer slurry defects, providing increased yield and lower energy consumption.