A Monolithic Uncooled Ultraviolet/Infrared Detector Array Capability

An optoelectronic integrated circuit combines intersubband infrared and wide bandgap ultraviolet absorption in one pixel with an integrated output. Currently, QWIPs employ a doped multiquantum well structure sandwiched between n+ type contacts. Thequantum barrier limited dark current flow requires cooling to 60K for BLIP performance and the QWIPs are hybrid bonded to a Si ROIC for electrical access. In this proposal the intersubband process occurs in a modulation-doped quantum well, so the darkcurrent is generation across a wide-gap semiconductor. No cooling is required because the low dark current allows room temperature BLIP operation. In addition, the wideband material surrounding the quantum well enables UV detection. Thus UV and IR sensingoccur in the same pixel. Both the IR and the UV detection mechanisms integrate electrons in the empty well at a inversion-channel interface which is the storage section of a CCD or active pixel with a dedicated output amplifier. The pixel is co-locatedfor both wavelengths so that the IR and UV signals are accessed sequentially. The approach has high pixel density, low noise, reduced power dissipation, circuit size and radiation resistance and manufacturability. In this STTR the dual detector will bedemonstrated as an active pixel or CCD.Uncooled CCD arrays with simultaneous IR and UV detection with seamless integrated electronic designs open the door to a wide array of low cost commercial and government product lines that include but are clearly notlimited to systems for ultra-high resolution night vision, atmospheric monitoring, medical imaging, thermal sensors, photolithography, and automated manufacturing monitoring.