SBIR/STTR Research Award
Gate-Oxide for Very High Speed GaAs IC Circuits
Award amount
$0Program and phase
SBIR · Phase IAward year
2002Award details
- Awarding agency
- Department of Defense
- Branch
- Defense Advanced Research Projects Agency
- Recipient company
- OSEMI INC
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- T4Y8NWLNK9J5
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
We propose to continue our extensive research and development effort regarding the demonstration of a high performance GaAs MOSFETs for very high speed low power VLSI applications. We intend to achieve this goal through a program that integrates advancesin MBE materials growth and MOS Device Technology for Compound Semiconductors. Through the course of this work, we expect to change the face of the IC technology by providing the foundation for the first manufacturable MOSFET IC technology for compoundsemiconductors.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Cubic BN Diodes and Transistors
- Cubic Boron Nitride Diodes and Transistors
- Ga2O3-AlN Heterojunction Epitaxy using Low-Temperature Plasmas
- Wide Area c-BN Substrates
- High Sb Content T2SLS Detectors for LWIR FLIR Imagers
Research funding history
9 SBIR/STTR records share this UEI (2001–2025). Reported award amounts total $1,832,250. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Energy