BMDO/02-214B - Nanomaterials Technology for High-Temperature Packaging of Power Semiconductor Devices

This MDA STTR Phase II proposal is a continuation of the work started in Phase I where we proposed to employ ionically self-assembled monolayer (ISAM) processing methods for the fabrication of interconnection joints for high temperature packaging of power electronics devices. The ISAM technique is a recently developed revolutionary method which provides nanoscale control of structure, density, and thickness of device components. Using this technique Luna has successfully demonstrated the feasibility of manufacturing interconnection joints capable of working at high temperatures, demonstrating promising bond strengths and durability. This nanotechnique approach has strong potential to make a successful impact on the electronics packaging industry due to the ease and low cost of large scale manufacturing and the potential improvements in device interconnects quality. In addition, this technology has the potential to greatly reduce the size and cost of power conditioning for military and commercial applications by enabling device miniaturization and the production of smaller, less-expensive, highly integrated WBG semiconductor devices and components. Many potential applications exist for this packaging technology including military applications in advanced, compact, high efficiency power electronics for operating in harsh environments, and commercial applications in the automotive, well logging and advanced electronics industries.