SBIR/STTR Research Award
HETEROJUNCTION MATERIALS CHARACTERIZATION
Award amount
$49,902Program and phase
SBIR · Phase IAward year
1992Award details
- Awarding agency
- National Science Foundation
- Branch
- Not reported
- Recipient company
- Kopin Corporation
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- HNBXALKTM475
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
CENTRAL TO THE CHARACTERIZATION REQUIREMENTS OF COMPOUND SEMICONDUCTOR HETEROJUNCTION MATERIALS IS TO QUANTITATIVELY DESCRIBE THE INTERFACE QUALITY, TO DETERMINE THE INTERFACE ELECTRIC FIELD, AND TO ESTABLISH THE RELATIONSHIP BETWEEN THESE MATERIAL PROPERTIES AND DEVICE PERFORMANCE. WE PROPOSE TO IMPLEMENT A TIME-RESOLVED PHOTOLUMINESCENCE (PL) TECHNIQUE AND THE RELATED ANALYSIS METHOD TO STUDY THE CARRIER RECOMBINATION DECAY PROCESS IN HETEROJUNCTION MATERIALS IN A NON-DESTRUCTIVE AND CONTACTLESS FASHION. THECORRESPONDING "SURFACE VELOCITY" PARAMETER DESCRIBING THE SURFACE AND/OR INTERFACE QUALITY AS WELL AS THE INTERFACE ELECTRIC FIELD CAN THEN BE DETERMINED QUANTITATIVELY.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Ultrahigh Definition Microdisplay (UDM)
- Development of High Performance AlInN-Based HEMTs
- Development of High Performance AlInN-Based HEMTs
- Nanostructured InGaP Solar Cells
- InN-Based Quantum Dot Solar Cells
Research funding history
46 SBIR/STTR records share this UEI (1987–2010). Reported award amounts total $9,584,861. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Aeronautics and Space Administration, National Science Foundation, Department of Energy