Advanced High Temperature Packaging Scheme with Nonwire-Bond Interconnection for SiC Power Switches

Wide band-gap devices such as silicon carbide (SiC) are becoming more attractive in energy storage and power electronics applications related to the electrical grid. High-temperature high-power-density packaging will be essential to the development of these SiC devices. However, present interconnections still use traditional wire bonding, making it the weakest link in the overall package. This project will develop and demonstrate a novel bonding technology, parallel-plate direct area bonding (PPDAB), for the packaging of SiC power devices, in order to achieve a non-wire, large-area interconnect. Phase I will design and test a prototype device (simplified SiC switch module) to characterize the performance of the scheme. Finite element analysis (FEA) modeling will be conducted to identify the residual and thermal stress distribution in the bonding structure, in order to determine the improvements in thermo-mechanical reliability, compared with a conventionally wire bonding technology. Commercial Applications and other Benefits as described by the awardee: A more robust interconnection scheme should speed the development of SiC power electronics. In addition to the application for distributed energy resources related to the electrical grid, the technology should find use in the transportation sector (energy storage in hybrid electric vehicles).