SBIR/STTR Research Award
High Reliability A1GaAs/GaAs HBT
Award amount
$100,000Program and phase
SBIR · Phase IAward year
1997Award details
- Awarding agency
- Department of Defense
- Branch
- Air Force
- Recipient company
- Kopin Corporation
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- HNBXALKTM475
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
The feasibility of reliable AlGaAs / GaAs based HBT at X-band will be investigated. The areas of investigation for reliability improvements include in-situ annealing for hydrogen removal, indium doping in the base layer, incorporation of AlGaAs buffer layers, and preliminary investigation of InGaP based emitter HBTs. Identifications of key problems will be made at the end of Phase I. A Phase II proposal will be submitted if positive results are shown. Phase II would concentrate on the reliability studies of both AlGaAs and InGaP based HBT's and the demonstration of power amplifiers a X-band. Phase III would involve large scale commercialization of this technology.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Ultrahigh Definition Microdisplay (UDM)
- Development of High Performance AlInN-Based HEMTs
- Development of High Performance AlInN-Based HEMTs
- Nanostructured InGaP Solar Cells
- InN-Based Quantum Dot Solar Cells
Research funding history
46 SBIR/STTR records share this UEI (1987–2010). Reported award amounts total $9,584,861. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Aeronautics and Space Administration, National Science Foundation, Department of Energy