SBIR Phase II: Single Step Chemical Mechanical Planarization of Copper/Ultra Low k Interconnects
Award amount
$496,673Program and phase
SBIR · Phase IIAward year
2006Award details
- Awarding agency
- National Science Foundation
- Branch
- Not reported
- Recipient company
- Sinmat Inc
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- EKDLPTKX33M6
- Solicitation number
- NSF 04-604
- Topic code
- MI
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Novel Reactive Defect Reduction Polishing Technology for Scalable Production of ElectronicDiamond Wafers
- Novel Ultra-High Rate Finishing Processes for Production of 100 mm Epi-ready GaN Substrates Title on abstract leaves out the word "Novel")
- Efficient Manufacturing of Low Defect Density SiC Substrates using a Novel Defect Capped Planarization Assisted Growth (DC-PAG) Method
- Innovative Polishing Technology for Fabrication of High Performance Epi-ready GaSb Substrates
- Production of Reduced Defect Density (112) Silicon Wafers Utilizing Ultra- Gentle, Chemical Mechanical Smoothening (CMS) Process
Research funding history
42 SBIR/STTR records share this UEI (2002–2016). Reported award amounts total $12,792,050. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Science Foundation, Department of Energy