SBIR/STTR Research Award
HIGH POWER InGaP PHEMT
Award amount
$100,000Program and phase
SBIR · Phase IAward year
1998Award details
- Awarding agency
- Department of Defense
- Branch
- Air Force
- Recipient company
- Kopin Corporation
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- HNBXALKTM475
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
The feasibility of InGaP PHEMT for high power amplifiers in the millimeter wave region will be investigated. InGaP has numerous inherent material properties which are potentially superior to AlGAAs based PHEMT's. The areas to be investigated include the optimization of the transport properties for both single sided and double sided doped PHEMT devices. Large and sub-micron FET devices will be fabricated and compared to conventional AlGAAs PHEMT devices. The key advantages of InGaP for high power amplifiers will be assessed in Phase I. Phase II will follow with emphasis on high power amplifier demonstration and reliability studies. Phase III would involve the large scale commercialization of this device for numerous low and millimeter wave applications.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Ultrahigh Definition Microdisplay (UDM)
- Development of High Performance AlInN-Based HEMTs
- Development of High Performance AlInN-Based HEMTs
- Nanostructured InGaP Solar Cells
- InN-Based Quantum Dot Solar Cells
Research funding history
46 SBIR/STTR records share this UEI (1987–2010). Reported award amounts total $9,584,861. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Aeronautics and Space Administration, National Science Foundation, Department of Energy