Gallium Nitride Heterojunction Bipolar Transistor

The feasibility of a high power Gan HBT with high breakdown voltages and high power densities will be determined at the end of Phase I of this contract. This intitial work will permit a better understanding of the GaN material system which has shown great promise for visible LED application and may also be applied to microwave power applifiers. A reduction of the defect density and growth temperature using defect filtering and alternative nitrogen precursors will be investigated. Identification of key problems will be determined. If positive results are shown, a Phase II proposal will be submitted for future development of this technology. The Phase II work should concentrate on the develpment of a GaN HBT power amplifier. Phase III would involve the commercialization of this technology.