DUAL SUSCEPTOR ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION FOR PRODUCTION OF HETEROSTRUCTURE MATERIALS

A PRODUCTION ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION REACTOR IS BEINGDESIGNED CAPABLE OF DEPOSITING UNIFORM AND ABRUPT LAYERS OF GAAS AND ALGAAS FOR THE NEXT GENERATION OF HETEROSTRUCTURE DEVICES. THESE INCLUDE HIGH ELECTRON MOBILITY STRUCTURES FOR BOTH DIGITAL AND MONOLITHIC MICROWAVE INTEGRATED CIRCUITS, AS WELL AS QUANTUM WELL STRUCTURES FOR OPTICAL COMMUNICATION. THIS DESIGN IS ANTICIPATED TO OBTAIN THE NECESSARY CONTROLS OVER THICKNESS AND UNIFORMITY SIMILAR TOTHAT OF MOLECULAR BEAM EPITAXY. THE DESIGN USES TWO SUSCEPTORS AND ANUPWARD FLOW TO SIMPLIFY THE GAS FLOW IN THE DEPOSITION ZONE. A PROTOTYPE REACTOR HAS BEEN CONSTRUCTED AND IS CURRENTLY IN USE. EXPERIMENTS ARE BEING CONDUCTED TO EVALUATE REACTOR PARAMETERS AND DETERMINE WHICH ONES ARE CRITICAL TO SCALE-UP OF THE SYSTEM. ADDITIONAL EXPERIMENTS ARE BEING DESIGNED AND, BASED ON THE UP-TO-DATERESULTS OF THE PROTOTYPE, THE REACTOR DESIGN IS BEING EVALUATED FOR USE IN PRODUCTION. THE SUCCESS OF THIS PROJECT WILL LOWER THE COST AND INCREASE THE PRODUCTION THROUGHPUT FOR MATERIALS REQUIRED IN THE NEXT GENERATION OF GAAS DEVICES.