SBIR/STTR Research Award

High Temperature Ultra-High Performance MWIR/LWIR Detectors Based on Plasmonic-Enhanced Type II Superlattices

Award identifier c87ebc0c5e508e23c8ea20d471e8a3b9c4803a68cdac438676d6d628401e1f71Awarding agency National Aeronautics and Space Administration

Award amount

$149,998

Program and phase

SBIR · Phase I

Award year

2024

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Award details

Awarding agency
National Aeronautics and Space Administration
Branch
Not reported
Recipient company
AMETHYST RESEARCH INC
Proposal award date
2024-08-06
Contract end date
2025-02-06
UEI
PXQASG336J91
Solicitation number
SBIR-2024-Phase 1
Topic code
S11

Research abstract

For ultra-high-performance IR detectors the only viable choice is HgCdTe or III-V type II SL based detectors. III-V is preferred over HgCdTe due to cost and a commercial supply chain. However, for LWIR HgCdTe still has superior performance. Performance can be improved either via material improvements (lifetimes) or through new designs. Performance of uncooled conventional MWIR/LWIR photodiodes are limited by the detectors’ dark current. Dark current scales with the detector volume, V; dark current noise scales as Sqrt V; and D* scales as 1/sqrt V. We propose to develop a MWIR/LWIR detector with an ultra-thin type-II superlattice absorber illuminated at a high intensity by a newly discovered surface plasmon polariton (SPP) mode produced by a grating etched into a highly-doped InAs layer. Unlike typical SPP modes that focus the intensity of incident electromagnetic waves approximately equally at the metallic and dielectric layers, this new mode focuses the intensity almost entirely at the dielectric layer where the absorber is located. The desired extent of coupling between the absorber and the new SPP mode can be achieved by optimizing the doping concentration of the InAs layer and the geometry of the etched grating. Photodiodes developed in this program will use plasmonic concentration to enable reduction of detector volumes by 104 – 105 x improving D* by ≥ 100. Such photodiodes will no longer be dark-current-limited, instead being limited by background radiation. In Phase I we will; model the SPP mode to optimize geometry of the grating and thickness of the InAsSb layer; Grow, fabricate, and measure structures to verify predictions of the model; Model the nBn T2SL candidate structures to find design for matching to the depth and wavelength of the SPP mode; Grow, fabricate and test nBn T2SL detectors without an etched grating to verify design. In Phase II we will develop designs and devices and deliver prototype high operating temperature MWIR and LWIR FPA’s.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

73 SBIR/STTR records share this UEI (2005–2025). Reported award amounts total $29,873,783. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, Department of Energy, National Aeronautics and Space Administration, National Science Foundation, Department of Commerce

Agency intelligence

National Aeronautics and Space Administration

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