QPICS: Quantum Dot Photonic Integrated Circuits on Silicon

The focus of this proposed effort is to provide a path to add high-performance quantum dot (QD) gain to SiPh by leveraging Aeluma’s large-diameter wafer technology and its relationships with SiPh foundry partners, with an emphasis on the performance requirements for space communications and sensing applications. Hybrid integration using flip-chip bonding or solder-based assembly of processed group III-V compound semiconductor lasers onto SiPh circuits has been commercialized but faces issues associated with scalability, robustness and SWaP reduction. Heterogeneous integration such as wafer- or die-to-wafer bonding, and emerging micro-transfer printing (MTP), have attracted interest more recently. These approaches address several critical challenges by bonding III-V gain chiplets into SiPh to form gain elements and lasers. III-V substrate costs and complex process integration, however, have limited the broad adoption of these technologies. The direct heteroepitaxy of III-V QD lasers on silicon, as proposed here, is considered the ultimate solution for scaling SiPh for broad market adoption, for SWaP reduction, and for increased performance, robustness, and reliability.