Heterogeneous Integration of InGaAs Pixels on CMOS for Dual-Band VIS/SWIR Imaging

This proposal addresses the Navyís need for a compact, high-performance dual-band visible (VIS) and short-wave infrared (SWIR) camera by leveraging Aelumaís heterogeneous integration of InGaAs pixels on CMOS. Current imaging systems rely on separate VIS and SWIR focal plane arrays (FPAs), increasing system complexity, alignment challenges, and size, weight, and power (SWaP). Aeluma proposes a monolithic integration approach using selective area growth (SAG) of InGaAs PIN photodiodes directly on CMOS-compatible silicon substrates, eliminating the need for discrete SWIR sensors while improving alignment, manufacturability, and scalability.Phase I will demonstrate the feasibility of SAG-grown InGaAs SWIR photodetectors on silicon, optimizing pixel size, pitch, and material quality. Initial growths will cover the full SWIR range (900ñ1700 nm), and multi-band detection feasibility will be assessed through multi-step regrowth. Material quality will be evaluated using advanced characterization techniques, and prototype PIN diodes will be fabricated and tested for dark current, responsivity, and spectral performance. Aeluma will also engage with CMOS and silicon photonics foundries to assess process compatibility and define a transition strategy for large-scale fabrication using 200mm and 300mm CMOS manufacturing platforms.Phase II will build on Phase I results to develop a fully functional VIS/SWIR sensor prototype, integrating a CMOS readout circuit (ROIC) via hybrid wafer bonding with planar copper interconnects. The final system will enable real-time imaging, enhanced situational awareness, and target identification in naval operations. This approach provides a scalable, manufacturable solution for next-generation dual-band imaging, with potential applications in defense, surveillance, navigation, and machine vision.