Heterogeneously Integrated InGaAs Single-Photon Avalanche Diode Detection Head

Aeluma proposes to leverage its large-diameter wafer compound semiconductor platform for high-performance single-photon avalanche diodes (SPADs) operating near 1030nm. This wavelength region is more attractive than green (i.e. 532nm) wavelengths for improved eye safety and better atmospheric transmission. Aeluma’s breakthrough technology includes the ability to manufacture high-performance compound semiconductor devices, such as indium gallium arsenide (InGaAs) photodetectors, on large-diameter substrates including 12-inch Silicon. This enables scalable, cost-effective manufacturing and wafer-scale integration with read-out integrated circuits (ROICs). Aeluma will develop a full concept to realize a SPAD detector head using an InGaAs-based SPAD technology and a custom ROIC incorporating the required functions to meet the topic performance metrics.